收藏本站
Electrical Characteristics
T A =25 ° C unless otherwise noted
Symbol
Parameter
Conditions
Type
Min.
Typ.
Max. Units
OFF CHARACTERISTICS
BV DSS
I DSS
I GSSF
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
V GS = 0V, I D = 100 μ A
V DS = 25V, V GS = 0V
V GS = 15V, V DS = 0V
All
All
All
60
0.5
10
V
μ A
nA
ON CHARACTERISTICS (Notes 1)
V GS(th)
Gate Threshold Voltage
V DS = V GS , I D = 1mA
All
0.8
2.1
3
V
R DS(ON) Static Drain-Source On-Resistance V GS = 10V, I D = 200mA
All
1.2
5
Ω
g FS
Forward Transconductance
V DS = 10V, I D = 200mA
BS170
320
mS
Dynamic Characteristics
V DS ≥ 2 V DS(on) ,
I D = 200mA
MMBF170
320
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 10V, V GS = 0V,
f = 1.0MHz
All
All
All
24
17
7
40
30
10
pF
pF
pF
Switching Characteristics (Notes 1)
t on
Turn-On Time
V DD = 25V, I D = 200mA,
V GS = 10V, R GEN = 25 Ω
BS170
10
ns
V DD = 25V, I D = 500mA,
V GS = 10V, R GEN = 50 Ω
MMBF170
10
t off
Turn-Off Time
V DD = 25V, I D = 200mA,
V GS = 10V, R GEN = 25 Ω
BS170
10
ns
V DD = 25V, I D = 500mA,
V GS = 10V, R GEN = 50 Ω
Note:
1. Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2.0%.
Ordering Information
MMBF170
10
Part Number
BS170
BS170_D26Z
BS170_D27Z
BS170_D74Z
BS170_D75Z
MMBF170
Package
TO-92
TO-92
TO-92
TO-92
TO-92
SOT-23
Package Type
BULK
Tape and Reel
Tape and Reel
AMMO
AMMO
Tape and Reel
Lead Frame
STRAIGHT
FORMING
FORMING
FORMING
FORMING
Pin array
DGS
DGS
DGS
DGS
DGS
? 2010 Fairchild Semiconductor Corporation
BS170 / MMBF170 Rev. E2
2
www.fairchildsemi.com
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
MMBF2201NT1 MOSFET N-CH 20V 300MA SOT-323
MMBF2202PT1 MOSFET P-CH 20V 300MA SOT-323
MMDF1N05ER2G MOSFET N-CHAN DUAL 2A 50V 8SOIC
MMDF2C03HDR2G MOSFET N/P-CHAN 2A 30V 8SOIC
MMDF2N02ER2G MOSFET N-CHAN DUAL 2A 25V 8SOIC
MMDF2P02ER2G MOSFET PWR P-CH 25V 2.5A 8-SOIC
MMDF2P02HDR2G MOSFET P-CH DUAL 3.3A 20V 8SOIC
MMDF3N02HDR2G MOSFET PWR P-CH 20V 3.8A 8-SOIC
相关代理商/技术参数
MMBF170 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23
MMBF170_08 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
MMBF170_1 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
MMBF170_D87Z 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
MMBF170_G 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR
MMBF170_Q 功能描述:MOSFET N-Ch Enhance RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
MMBF170-7 功能描述:MOSFET 60V 225mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
MMBF170-7-F 功能描述:MOSFET 60V 225mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube